A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• pattern tilted samples, making use of the large depth of field of the HIM [109]. A model-based method for HIBL proximity-effect correction has also been developed [110]. And a recent study has investigated the resist sensitivities and ion scattering profiles for 30 keV helium ions compared with a few

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• relatively large Ga+ beam diameter (approx. 5 nm) and a high proximity effect generated by Ga+ ion scattering. Regarding a higher spatial resolution, the helium ion microscope (HIM) [27], based on a gas field-ionization source, has emerged as a tool for direct writing of complex 3D nano-objects taking

Stationary beam full-field transmission helium ion microscopy using sub-50 keV He⁺: Projected images and intensity patterns

• Michael Mousley,
• Santhana Eswara,
• Olivier De Castro,
• Olivier Bouton,
• Nico Klingner,
• Christoph T. Koch,
• Gregor Hlawacek and
• Tom Wirtz

Beilstein J. Nanotechnol. 2019, 10, 1648–1657, doi:10.3762/bjnano.10.160

• (THIM) for sub-50 keV helium has been constructed to investigate ion scattering processes and contrast mechanisms, aiding the development of new imaging and analysis modalities. Unlike a commercial helium ion microscope (HIM), the in-house built instrument allows full flexibility in experimental

• diffraction; ion scattering; transmission ion microscopy; Introduction The use of helium ions for microscopy and nanoanalysis is gaining popularity due to the availability of the high-brightness gas field ion source (GFIS) [1]. Due to the high brightness, the probe from a GFIS can be focused into a spot of

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• and resist properties with subsequent ion scattering and ionization cascade. It is not due to de Broglie quantum mechanical wavelength of the charged particle as seen through the comparisons in Table 1. These wavelengths determine the diffraction contribution ddf to the ultimate probe size for all

Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes

• Yongfeng Tong,
• Tingming Jiang,
• Azzedine Bendounan,
• Makri Nimbegondi Kotresh Harish,
• Angelo Giglia,
• Stefan Kubsky,
• Fausto Sirotti,
• Luca Pasquali,
• Srinivasan Sampath and
• Vladimir A. Esaulov

Beilstein J. Nanotechnol. 2016, 7, 263–277, doi:10.3762/bjnano.7.24

• described below. Studies of alkane and phenyl thiols do exist and they conclude that an ordered thiol layer is formed [76][77][78]. BDMT evaporative adsorption was studied on Au(111), Cu(100) and Cu(111) surfaces by Alarcón et al. [25][79] using time-of-flight ion scattering [80], which allows the study of

Scanning reflection ion microscopy in a helium ion microscope

• Yuri V. Petrov and
• Oleg F. Vyvenko

Beilstein J. Nanotechnol. 2015, 6, 1125–1137, doi:10.3762/bjnano.6.114

• detectable step height was found to be approximately 5 nm. RIM imaging of an insulator surface without the need for charge compensation was successfully demonstrated. Keywords: helium ion microscope; low-angle ion scattering; reflection microscopy; surface imaging; surface morphology; Introduction

• in the SE and in RI images, the origin of their mechanisms are quite different. Effect of a surface charge The RI image formation mechanisms described above originate from the ion scattering by the geometrical specimen relief and do not take into account the possible impact of surface charging

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

• Federico Baiutti,
• Georg Christiani and
• Gennady Logvenov

Beilstein J. Nanotechnol. 2014, 5, 596–602, doi:10.3762/bjnano.5.70

• ports: four of these are occupied by the two growth chambers, a load lock and a storage chamber, leaving four spare ports for a future expansion of the system. It will be possible to attach, for example, spectroscopic tools such as angular resolved photoemission spectroscopy (ARPES), time-of-flight ion

• scattering and recoil spectroscopy (TOF-ISARS), X-ray photoelectron spectroscopy (XPS) or any other, according to demands. Each chamber has a vertical design, which allows for the substrate transfer system to be fully automated. The substrate transfer between the load lock, the storage and each growth

Fabrication of carbon nanomembranes by helium ion beam lithography

• Xianghui Zhang,
• Henning Vieker,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20

• , the low proximity effect that arises from the finite excited volume, in which the ion–material interaction takes place, extending deeply into the material, and the confinement of ion scattering to the secondary electron escape depth promise an outstanding performance of HIM [20]. So far, various

• 60 times smaller than the corresponding electron irradiation dose (ca. 50,000 µC/cm2, 100 eV) [13]. The energy loss of helium ions in alkanethiol SAMs on Au were investigated by neutral impact collision ion scattering spectroscopy (NICISS) and the stopping power was determined to be about 3.7 eV/Å

Nanolesions induced by heavy ions in human tissues: Experimental and theoretical studies

• Marcus Bleicher,
• Lucas Burigo,
• Marco Durante,
• Maren Herrlitz,
• Michael Krämer,
• Igor Mishustin,
• Iris Müller,
• Francesco Natale,
• Igor Pshenichnov,
• Stefan Schramm,
• Gisela Taucher-Scholz and
• Cathrin Wälzlein

Beilstein J. Nanotechnol. 2012, 3, 556–563, doi:10.3762/bjnano.3.64

• against experimental results. Gottschalk et al. [17] have measured the angular distribution of 158.6 MeV protons incident on several different target materials and thicknesses. The TRAX simulations including elastic ion scattering showed good agreement with these experimental results, as can be seen in

• Figure 7. Additionally the simulations were compared to Highland's formula [18], which is a parameterized approximation of the Molière theory. The implementation of elastic ion scattering is an important step towards a complete description of the relevant physical effects that contribute to the energy

• , the shift of ionization and excitation events of the primary ions is noticeable. The resulting radial dose with and without elastic ion scattering is shown in the lower picture. It can be seen that the radial dose differs in the area that is equal to the radius of the elastic scattering of ions. The

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

• Gregor Hlawacek,
• Vasilisa Veligura,
• Stefan Lorbek,
• Tijs F. Mocking,
• Antony George,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 507–512, doi:10.3762/bjnano.3.58

• ion microscopy; ion scattering; thin layers; Introduction The helium ion microscope (HIM) has established itself as a high-performance alternative to the classic scanning electron microscope (SEM). The superior resolution and the outstanding performance on insulating samples are well-known facts [1

Channeling in helium ion microscopy: Mapping of crystal orientation

• Vasilisa Veligura,
• Gregor Hlawacek,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 501–506, doi:10.3762/bjnano.3.57

• images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner. Keywords: channeling; crystallography; helium ion microscopy; ion scattering; Introduction The superior resolution of the helium ion

• past in the context of ion scattering methods, such as Rutherford backscattering (RBS) and medium- and low-energy ion scattering. Many ion scattering phenomena are well understood for the very high energies of several hundred keV up to MeV that are used in RBS. Although energies in HIM are different